演題概要

3C-O2-1451

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Si微細加工基板の光励起ソフトイオン化における構造サイズ依存性

(¹北大院総化・ ²JEOL協働研・ ³阪大リノ工作・ ⁴阪大院理・ ⁵北大電子研)
藤井優祐¹・ 古谷浩志³・ 大須賀潤一²・ 豊田岐聡⁴・ ^o松尾保孝⁵

The soft ionization technique by photoexcitation of nanofabricated microstructures on the surface of silicon substrates was investigated. Patterns of nanopillars with diameters ranging from 100 nm to 400 nm and heights of several hundred nm arrayed at pillar space varying from 100 nm to 400 nm were fabricated on a silicon substrate by electron beam lithography and dry etching techniques. Glycine solution was dropped onto the fabricated structures and the mass spectrum was measured by laser irradiation. As a result, protonated glycine was detected at lower laser intensities on the substrate with nanostructures compared to the flat surface of Si substrate. It is considered that the substrates with nanostructures have a high optical absorption, suggesting that efficient optical absorption accelerated ionization. There were also significant differences in the ion intensity detected depending on the structure size. In this report, the correlation between the fabricated structure size and soft ionization efficiency is discussed in more detail.