Abstract

Oral Sessions

Day 2, May 12（Tue.）　15:30-15:50　Room C (1101/02)

2C-O9-1530　　PDF

Development of a plasma diagnostic method for high power pulsed magnetron sputtering using a reflectron-type time-of-flight mass spectrometer

(¹Tokyo Polytech. Univ., ²Ayabo Corp., ³Tohoku Univ.)
^oMasaomi Sanekata¹, Yuki Nakagomi¹, Mutsuki Hirayama¹, Tatsuya Watabe¹, Hiroshi Nishida¹, Nobuo Nishimiya¹, Masahide Tona², Naoyuki Hirata², Hiroaki Yamamoto², Keizo Tsukamoto², Keijiro Ohshimo³, Fuminori Misaizu³

Magnetron sputtering is one of the vacuum deposition techniques widely used in industrial production of thin films and coating films. Recently, the development of high power pulsed magnetron sputtering (HPPMS) allowed the cathode to inject more power than the power limit of target damage in conventional DC magnetron sputtering (DCMS). In addition, HPPMS is possible to form coating films with excellent properties such as high smoothness and high adhesion due to ion-assisted effect exposing the substrate to ionized sputtered particles generated at high density in the plasma. In the film formation using HPPMS, the ionization rate of sputtered particles is an important index for film formation control. In this study, we developed a new plasma diagnostics using time-of-flight mass spectrometer with VUV laser photoionization to measure the ion species and ionization rate at the deposition substrate in HPPMS. In the TOF mass spectrum observed in the deposition region of HPPMS, ion species of sputtered particles that could not be observed in the deposition region of DCMS were observed. In this presentation, we will discuss the atomic processes of ion species generation in HPPMS, based on the temporal profile of neutral/ionized sputtered particles and the optical emission spectra measured in the sputtering region.